High-Speed and High-Power Ge-on-Si Photodetector with Bilateral Mode-Evolution-Based Coupler

High-Speed and High-Power Ge-on-Si Photodetector with Bilateral Mode-Evolution-Based Coupler

Blog Article

We propose a germanium-on-silicon photodetector with a bilateral mode-evolution-based coupler.Based on the double-sided mode-evolution, the light illuminates the whole Ge absorption region uniformly, which alleviates the space-charge effects and decreases the saturation effects.The simulated results show 53% Lip Liner more photocurrent generation and more than 19 times the opto-electrical bandwidth than conventional butt-coupled photodetectors under high-power illumination.In addition, an equivalent circuit model is presented to investigate the limiting factors of bandwidth.A CANNACELL HAPPY DAY CREAM genetic algorithm is used to extract the parameter values of components in an equivalent circuit by fitting the simulated two-port S22 parameter.

The results show significant improvement in high-power and high-speed performance compared with conventional butt-coupled detectors.